Singularity-Enhanced Terahertz Detection in High-Mobility Field-Effect Transistors

Helicity sensitive terahertz radiation detection by field effect transistors

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Carrier Mobility in Field-Effect Transistors

Authors investigate the carrier mobility in field-effect transistors mainly when fabricated on Si(110) wafers. They showed that the methods developed to extract the conduction parameters cannot be implemented for Si(110) p-MOSFETs. Authors then developed a more accurate mobility model able to simulate not only the drivability but also the transconductance for these same devices. The study of th...

High electron mobility InAs nanowire field-effect transistors.

Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier...

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors F. Teppea,∗, C. Consejo, J. Torres, B. Chenaud, P. Solignac, S. Fathololoumi, Z.R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, A. El Fatimy, P. Buzatu, C. Chaubet and W. Knap L2C, UMR N◦ 5221 CNRS, Université Montpellier 2, GIS-TERALAB, 34095 Montpellier, France IES, UMR N◦ 5214 CNRS, Univ...